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    合肥单晶材料科技有限公司

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      Ge

      Ge

      Retail Price

      $ 1374.25

      Market Price

      Category：

      Crystal Substrate

      E - H

      Keywords：

      Ge

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      隐藏域元素占位

      • Description

      • 　　Ge Wafer Specification

        　　Growing Method: VGF

        　　Orientation: (100) +/-0.5 Deg.

        　　Wafer Size: 100(+/-0.4) mm dia x 175(+/-25) microns

        　　Surface Polishing: One side polished

        　　Surface roughness: < 8 A

        　　Doping: Ga Doped

        　　Conductor type: P-type

        　　Carrier Concentration: (0.92-4.13) E16 /c.c

        　　Mobility: (1520-2090) cm^2/v.s

        　　EPD: <=500 /cm^2

        　　Typical Properties:

        　　Structure: Cubic, a = 5.6754Å

        　　Density: 5.323 g/cm3 at room temperature

        　　Melting Point: 937.4 oC

        　　Thermal Conductivity: 640

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      Consultation Hotline

      86-551-63468281

       

      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

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      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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