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    合肥单晶材料科技有限公司

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      SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

      SiC Film (3C) on Si Wafer

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      $ 286.35

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      Thin Films

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      SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 10x10x1.0mm

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      • Description

      • 　　Specifications:

        　　Film: SiC Epi film with 3C structure grown by PECVD

        　　Thickness:1.0um +/- 10%

        　　Orientation: 3C SiC (111)

        　　Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom

        　　Type and dopant: N type, Undoped

        　　Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2

        　　TTV 5-29

        　　Bow -9 ~ 3

        　　Silicon substrate:

        　　Size: 10x10 x 1.0 mm thickness

        　　Orientation: (111)

        　　Type:N type / P doped

        　　Resistivity:1- 10 ohm.cm

        　　Polish: Both sides optical polished

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      Consultation Hotline

      86-551-63468281

       

      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

      Banking documents

       

      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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