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    合肥单晶材料科技有限公司

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      GaP

      GaP

      Retail Price

      $ 205.85

      Market Price

      Category：

      Crystal Substrate

      E - H

      Keywords：

      GaP

      Quantity
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      Remaining Inventory

      1000

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      隐藏域元素占位

      • Description
        • GaP single crystal wafer,
        • Size: 10mm x 10 mm x 0.5 mm,
        • Doping: undoped,
        • Conducting type: N-type,
        • Orientation: (111)
        • Polished: Two sides
        • Surface finish (RMS or Ra) :  < 8A
         
        • Typical Physical Properties

        Crystal Structure

        Cubic.            a =5.4505 Å

        Growth Method

        CZ (LEC)

        Density

        4.13  g/cm3

        Melt Point

        1480  oC

        Thermal Expansion

        5.3 x10-6  / oC

        Dopant

        S doped

        undoped

        Crystal growth axis

        <111>  or <100>

        <100> or <111>

        Conducting Type

        N

        N

        Carrier Concentration

        2 ~ 8 x1017 /cm3

        4 ~ 6 x1016 /cm3

        Resistivity

        ~ 0.03 W-cm

        ~ 0.3 W-cm

        EPD

        < 3x105

        < 3x105

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      Consultation Hotline

      86-551-63468281

       

      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

      Banking documents

       

      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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