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    合肥单晶材料科技有限公司

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      4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US

      Ge epi-film on Si

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      $ 1293.75

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      Thin Films

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      4" N-type Ge epi-film on N-type Silicon Wafer, 0.5 um thickness - FmGeNtypeonSiNtypea101D05C1US

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      • Description

      • 　　Specifications:

        　　Silicon Wafer

        　　Type: N/ P doped

        　　Orientation: (100)

        　　Size: 4'' dia

        　　Thickness: 500 - 550 um

        　　Grade: Prime

        　　Flates: 2 SEMI-STD on Axis 0 degree off

        　　Resistivity: 1-10 ohm.cm

        　　Backside: Etch

        　　Particles: < 50 @ >0.20 um

        　　TDD: <1E8 cm^2

        　　Film: Ge epi-film

        　　Thickness: 0.5 um +/- 3%

        　　Orientation: (100)

        　　Type: N-type

        　　Dopant concentration: ~5E18 /cc

        　　Current RMS spec: Ra < 2 nm

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      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

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      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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