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    合肥单晶材料科技有限公司

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      GaN

      GaN

      Retail Price

      $ 596.85

      Market Price

      Category：

      Crystal Substrate

      E - H

      Keywords：

      GaN

      Quantity
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      Remaining Inventory

      1000

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      隐藏域元素占位

      • Description

      • 　　Specifications

        　　Sizes 2” Round

        　　Dimensions 50.8mm +/- 0.25mm

        　　Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o

        　　Substrate Sapphirethickness: 0.43mm+/-0.025mm

        　　Conduction Type: N-type,

        　　Resistivity < 0.5 Ohm-cm

        　　Front Surface Finish (Ga Face) As-grown

        　　Back Surface Finish Sapphire as-received finish

        　　Useable Surface Area >90%

        　　Edge Exclusion Area 1mm

        　　Dislocation Density: <5x10^8 cm^−2

        　　Package Single Wafer Container

        　　GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS

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      86-551-63468281

       

      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

      Banking documents

       

      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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