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      Graphene film on Ni/SiO2/Si 100mm dia

      Carbon Substrate & Foam

      Retail Price

      $ 803.85

      Market Price


      Keywords:

      Graphene film on Ni/SiO2/Si 100mm dia

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      隐藏域元素占位

      • Description
      •   Graphene™ films are grown directly on a Ni/SiO2/Si deposited on an oxidized silicon wafer usinga CVD process.

          Specifications: Research Grade , about 90 % useful area

          Wafer Size: 100 mm diameter

          Growth Method:Chemical Vapor Deposition (CVD) Technique

          Film thickness: 1-10 monolayer thick

          Graphene film is multilayer with thickness varying in the range 1-10 layers;

          Graphene layers are aligned relative to each (graphite-like A-B stacking ) other as indicated by the Raman spectrum

          The graphene is grown on Ni film by CVD process.

          Nickel film is deposited on the substrate covered by thermally grown oxide layer

          Thickness of the Ni layer is 400 nm;

          The thickness of the silicon oxide layer is 500 nm;

          The thickness of the wafer is 500 μm

          The crystallographic orientation of silicon is 100;

          films are continuous with low defect density.

          Atomically thin carbon film ( 1-10 layer )

          Outstanding electronic properties

          Chemical inertness and stability

          Unprecedented mechanical strength

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      86-551-63468281

       

      Manager Xu:86-13855129449

      Manager Liu:86-13721080069

      E-mail:saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

      Banking documents

       

      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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