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    合肥单晶材料科技有限公司

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      SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US

      SiC (4H,6H,3C)

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      $ 546.25

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      Crystal Substrate

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      SiC - 4H (0001), 1" dia. x0.26 mm th., one side polished - SC4Hz25D026C1US

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      隐藏域元素占位

      • Description

      • 　　Specifications of Substrate

        　　Orientation: <0001> +/-0.5

        　　Dimension: 1" x 0.26 +/-0.03 mm

        　　Polished: One side epi polished

        　　Surface Roughness: < 5 A by AFM

        　　Typical Properties of Single Crystal SiC

        　　Formula weight: 40.10

        　　Unit Cell: Hexagonal

        　　Lattice constant: a =3.07 A c = 10.53 A

        　　Stacking sequence: ABCB (4H)

        　　Growth Technique: MOCVD

        　　Polishing : Silicon face polished

        　　Band Gap: 3.26eV ( Indirect)

        　　Conductivity type: N

        　　TTV/Bow/Warp: <=35 um

        　　Micropipe Density: <=30 cm^-2

        　　Resistivity: 0.015~0.5 ohm-cm

        　　Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33

        　　Thermal Conductivity @ 300K: 4W / cm . K

        　　Hardness: 9 Mohs

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