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    合肥单晶材料科技有限公司

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      Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm

      Ni-Coated Si

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      $ 572.7

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      Thin Films

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      Nickel <111> Film (100nm) + 300 nm SiO2 coated Silicon Wafer -4" dia .(100) P/Boron ,SSP, R:1-20 ohm.cm

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      • Description

      • 　　Nickel Metallic Film

        　　Nickel Thickness: 100nm

        　　Film Crystallinity: (111) - oriented polycrystals

        　　Roughness, RMS: N/A

        　　Silicon Wafer Specifications:

        　　Conductive type: Si P- type, B-doped

        　　Resistivity: 1-20 ohm-cm

        　　Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th

        　　Orientation: (100) +/- 0.5o

        　　Polish: One sides polished

        　　Surface roughness: Prime

        　　Packing: Vacuum packed on a 4" single wafer carrier

        　　Optional: you may need tool below to handle the wafer ( click picture to order )

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      Consultation Hotline

      86-551-63468281

       

      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

      Banking documents

       

      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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