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    合肥单晶材料科技有限公司

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      SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)

      SOI (Silicon On Insulator)

      Retail Price

      $ 28.69

      Market Price

      Category：

      Crystal Substrate

      Q - U

      Keywords：

      SOI Wafer: 10x10x0.625mm, 2.5um (P-doped) +1.0 SiO2 +625um Si (P-type/Boron doped)

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      隐藏域元素占位

      • Description
      • Specifications
         

        Device Layer

        Size:

         

        10x10
         

        Type/Dopant:

         

        N type/P-doped

        Orientation:

         

        <1-0-0>+/-0.5 degree

        Thickness:

         

        2.5±0.5µm

        Resistivity:

         

        1-4 ohm-cm

        Finish:

        		 

        Front Side Polished

        Buried Thermal Oxide:

        Thickness:

         

        1.0 um +/-  0.1 um

        Handle Wafers:

        Type/Dopant

        		 

        P type/B-doped

        Orientation

         

        <1-0-0>+/-0.5 degree

        Resistivity:

        		 

        10-20 ohm.cm

        Thickness:

         

        625 +/- 15 um

        Finish:

         

        As received (not polished)

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      Consultation Hotline

      86-551-63468281

       

      Manager Xu：86-13855129449

      Manager Liu：86-13721080069

      E-mail：saleswafer@126.com

      No. 558 Shanhu Road, Shushan District, Hefei City, Anhui Province

      Banking documents

       

      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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