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    合肥单晶材料科技有限公司

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      100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100

      Silicon-Nitride on Silicon

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      $ 263.35

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      Thin Films

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      100 nm Silicon Nitride Film (PE-CVD) on Si(100)P-type ,B-doped 100 mm dia .x0.525mm thick, 1sp,R:0.001-0.005 ohm.cm - FmSi3N4onSiBa100D0525C1FT100

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      • Description

      • 　　Silicon Nitride Film

        　　Si3N4 Film coated by low stress PE-CVD method

        　　Si3N4 Thickness: 100nm +/- 8%

        　　Si3N4 covers front polished side of Silicon wafer ONLY

        　　Refractive Index of Si3N3: 1.98 +/-0.05 @ 632.8nm

        　　Silicon Wafer Specifications:

        　　Conductive type: Si P- type, B-doped

        　　Resistivity: 0.001-0.005 ohm-cm

        　　Size: 4" diameter +/- 0.5 mm x 0.525 +/- 0.025 mm th

        　　Orientation: (100) +/- 0.5o

        　　Polish: One side polished

        　　Surface roughness: Prime

        　　Packing: Vacuum packed on a 4" single wafer carrier box

        　　Optional: you may need tool below to handle the wafer ( click picture to order )

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      Company Name: Hefei Monocrystalline Material Technology Co., Ltd
      Address: Room 401, Building 1, Comprehensive Building, Shanhu Road, Shushan District, Hefei City, Anhui Province
      Bank of Deposit: Bank of Communications Co., Ltd. Hefei Huayuan Street Branch

      Account: 3413 2100 0013 0015 27315

      Tax ID: 9134 0104 MA8N LK2Q 7J

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